1N4448
SMALL SIGNAL SWITCHING DIODE

Part Number

Mfg

Pack

D/C

Description

Inquire

Specifications

Symbol	Parameter	Value	Units
V_RRM	Maximum Repetitive Reverse Voltage	100	V
I_F(AV)	Average Rectified Forward Current	200	mA
I_FSM	Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond	1.0 4.0	A A
T_stg	Storage Temperature Range	-65 to +200	°C
T_J	Operating Junction Temperature	175	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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Datasheet

	Size: 190.69KB
	Page: 3
	PDF: 1N4448.pdf

Description:
SMALL SIGNAL SWITCHING DIODE
MFG:
CHENYI [Shanghai Lunsure Electronic Tech]

Abstract

CE 1N4448
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 75 Volts
Peak reverse voltage VRM 100 Volts
Average rectified current, Half wave rectification with IAV 1501) mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 mW
Power dissipation at TA=25 Ptot 5001) mW
Junction temperature TJ 175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage at IF=5mA VF 0.62 0.72 V
at IF=10mA VF 1 V
Leakage current at VR=20V IR 25 nA
at VR=75V IR 5 A
at VR=20V, TJ=150 IR 50 A
Junction capacitance at VR=VF=0V CJ 4 pF
Reverse breakdown voltage tested with 100 A puse V(BR)R 100 V
Reverse recovery time from IF=10mA to IR=1mA, 4
VR=6V, RL=100
Thermal resistance junction to ambient R JA 3501) 3501)
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
trr ns
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3

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1N4448SMALL SIGNAL SWITCHING DIODE

Specifications

Related Models

Datasheet

Abstract

1N4448
SMALL SIGNAL SWITCHING DIODE