BAS70H
SURFACE MOUNT SCHOTTKY BARRIER DIODE

Part Number

Mfg

Pack

D/C

Description

Inquire

Specifications

Characteristic	Symbol	Value	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	V_RRM V_RWMV_R	70	V
RMS Reverse Voltage	V_R(RMS)	49	V
Forward Continuous Current (Note 1)	I_F	200	mA
Non-Repetitive Peak Forward Surge Current @ t_p<1.0s	I_FSM	600	mA
Power Dissipation (Note 1)	P_d	200	mW
Thermal Resistance Junction to Ambient Air (Note 1)	R_θJA	625	K/W
Operating and Storage Temperature Range	T_j	-55 to +125	℃
Storage Temperature Range	T_STG	-65 to +125	℃

Features

· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and ESD Protection

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Datasheet

	Size: 60.78KB
	Page: 1
	PDF: BAS70H.pdf

Description:
SURFACE MOUNT SCHOTTKY BARRIER DIODE
MFG:
DIODES [Diodes Incorporated]

DS30190 Rev. 4 - 4 1 of 1 BAS70H/-04/-05/-06
BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
c183 Case: SOT-23, Molded Plastic
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Polarity: See Diagrams
c183 Approx. Weight: 0.008 grams
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Mechanical Data
Characteristic Symbol BAS70 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage VR(RMS) 49 V
Forward Continuous Current (Note 1) IF 200 mA
Non-Repetitive Peak Forward Surge Current @ t
p
c60 1.0s IFSM 600 mA
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance Junction to Ambient Air (Note 1) Rc113JA 625 K/W
Operating and Storage Temperature Range Tj -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Characteristic Symbol Min MaxUnit Test Condition
Reverse Breakdown Voltage (Note 2) V(BR)R 70 — V I
R
= 10c109A
Forward Voltage VF —
410
1000
mV
t
p
<300?s, I
F
= 1.0mA
t
p
<300?s, I
F
= 15mA
Peak Reverse Current IRM c190 100 nA tp < 300?s, VR = 50V
Junction Capacitance Cj c190 2.0 pF VR = 0V, f = 1.0MHz
Reverse Recovery Time trr —5.0ns
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100c87
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000c109s.
c183 Low Turn-on Voltage
c183 Fast Switching
c183 PN Junction Guard Ring for Transient and
ESD Protection
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
SOT-23
Dim Min Max
A 0.37 0.51
B 1.19 1.40
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm
Electrical Ratings
@ T
A
= 25°C unless otherwise specified
BAS70H Marking: K73 BAS70H-04 Marking: K74 BAS70H-05 Marking: K75 BAS70H-06 Marking: K76
DISCONTINUED
-
USE BAS70
SERIES

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BAS70H
SURFACE MOUNT SCHOTTKY BARRIER DIODE

Specifications

Features

Pinout

Related Models

Datasheet

Abstract

BAS70HSURFACE MOUNT SCHOTTKY BARRIER DIODE

Specifications

Features

Pinout

Related Models

Datasheet

Abstract

BAS70H
SURFACE MOUNT SCHOTTKY BARRIER DIODE