search
Home > Model List > Infineon Technologies AG >BSC042N03S

BSC042N03S
OptiMOS2 Power-Transistor

Part Number:
Quantity:
Country/Region:
Email:
Description:
Code:
For complete your requirements, please fill in the part number,quantity and other contact details. So that more suppliers will contact you.
  Supplier Information Part Number Mfg Pack D/C Description Inquire

Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID T C=25 °C 50 V
T C=100 °C 50
T A=25 °C,
RthJA=45 K/W2)		 20
Pulsed drain current ID,pulse T C=25 °C3) 200
Avalanche energy, single pulse EAS I D=50 A, RGS=25 Ω 280 mJ
Reverse diode dv /dt dv /dt I D=50 A, VDS=24 V,
di /dt =200 A/µs,
T j,max=150 °C		 6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot T C=25 °C 62.5 W
T A=25 °C,
RthJA=45 K/W2)		 2.8
Operating and storage temperature Tj, Tstg   -55 ... 150 °C
IEC climatic category; DIN IEC 68-1     55/150/56  

Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated

Pinout

Related Models

BSC0119N03S Micro-Power Voltage Detectors BSC016N03LSG DIGITAST Microminiature SPDT, Key Switches
BSC020N025S G 8-BIT MICROCONTROLLER BSC020N025SG OptiMOS㈢2 Power-Transistor
BSC020N03LSG .100 [2.54mm] CONTACT CENTERS, 431 INSULATOR HEIGHT BSC022N03N
BSC022N03S OptiMOS2 Power-Transistor BSC022N03S G LOW - POWER SINGLE SCHMITT-TRIGGLER BUFFER
BSC022N03S G INFINEON P-TDSON-8 05/06+ AJ3 Joystick for Heavy Duty Applications BSC022N03SG
BSC022N03SREV1.22 200V LOGIC N-Channel MOSFET BSC024N025S G Single Pole Power Rocker Switches
BSC024N025SG OptiMOS㈢2 Power-Transistor BSC027N03S G NEGATIVE, 3 AMP, LOW DROPOUT VOLTAGE REGULATOR
BSC029N025S G T-1 3/4 Precision Optical Performance White LED BSC030N03LSG 16-bit buffer/line driver; inverting 3-State
BSC030N03MS G SUBMINIATURE INTERMEDIATE POWER RELAY BSC030N03MSG
BSC032N03S OptiMOS2 Power-Transistor BSC032N03S G Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

Datasheet

Size: 299.33KB
Page: 10
PDF: BSC042N03S.pdf
  • Description:
    OptiMOS2 Power-Transistor
  • MFG:
    INFINEON [Infineon Technologies AG]
 

Abstract


BSC042N03S
OptiMOS
?
2 Power-Transistor
Features
? Fast switching MOSFET for SMPS
? Optimized technology for notebook DC/DC converters
? Qualified according to JEDEC
1
for target applications
? N-channel
? Logic level
? Excellent gate charge x R
DS(on)
product (FOM)
? Very low on-resistance R
DS(on)
? Superior thermal resistance
? Avalanche rated
? dv/dt rated
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25 °C 50 A
T
C
=100 °C 50
T
A
=25 °C,
R
thJA
=45 K/W
2)
20
Pulsed drain current I
D,pulse T
C
=25 °C
3)
200
Avalanche energy, single pulse E
AS
I
D
=50 A, R
GS
=25 ? 280 mJ
Reverse diode dv/dt dv/dt
I
D
=50 A, V
DS
=24 V,
di/dt=200 A/?s,
T
j,max
=150 °C
6 kV/?s
Gate source voltage V
GS
±20 V
Power dissipation P
tot
T
C
=25 °C 62.5 W
T
A
=25 °C,
R
thJA
=45 K/W
2)
2.8
Operating and storage temperature T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
V
DS
30 V
R
DS(on),max
4.2 m?
I
D
50 A
Product Summary
Type Package Ordering Code Marking
BSC042N03S P-TDSON-8 Q67042-S4220 42N03S
P-TDSON-8
Rev. 1.2 page 1 2004-04-13
Stock Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  All  
About Us  |  Contact us   |  Map  |  Link
© 2008-2011 TradeOfic.com Corp.All Rights Reserved.