FCX591
PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

Part Number

Mfg

Pack

D/C

Description

Inquire

Specifications

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage	V_CBO	-80	V
Collector-Emitter Voltage	V_CEO	-60	V
Emitter-Base Voltage	V_EBO	-5	V
Peak Pulse Current	I_CM	-2	A
Continuous Collector Current	I_C	-1	A
Base Current	I_B	-200	mA
Power Dissipation at T_amb =25℃	P_tot	1	W
Operating and Storage Temperature Range	T_j:T_stg	-55 to +150	℃

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Datasheet

	Size: 21.37KB
	Page: 1
	PDF: FCX591.pdf

Description:
PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
MFG:
ZETEX [Zetex Semiconductors]

SOT89
PNP SI
LICON PLANAR MEDIUM
POW
E
R HI
GH PERFORMANCE TRANSISTOR
ISSUE 3
-
NOVEMBE
R 1
995
a37
P
A
R
T
M
ARKI
NG DE
T
A
I
L
-
P
1
COMPL
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MENT
A
RY T
Y
PE
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F
CX4
9
1
ABSOL
U
TE M
A
XI
M
U
M

RATI
NGS.
PA
R
A
M
ETER
S
Y
M
BO
L
V
A
L
U
E
U
N
I
T
Co
l
l
ec
t
o
r
-
B
a
s
e
Vo
l
t
ag
e
V
CBO
-8
0
V
C
o
lle
c
to
r-
E
m
it
te
r V
o
lta
g
e
V
CEO
-6
0
V
E
m
itte
r
-
B
a
s
e
V
o
lt
a
g
e
V
EB
O
-5
V
Peak
Pu
l
s
e
Cur
r
ent
I
CM
-2
A
Co
n
t
i
n
uo
u
s
Co
l
l
ec
t
o
r
Cu
r
r
e
n
t
I
C
-1
A
B
a
se C
u
rrent
I
B
-
200
m
A
Po
w
e
r
D
i
ssi
pat
i
on
at
T
am
b
=2
5

C
P
to
t
1W
O
p
er
a
t
i
n
g and
St
or
age T
e
m
p
er
a
t
ur
e

R
a
n
g
e
T
j
:T
st
g
-
65 t
o
+
150

C
EL
ECTRI
C
AL

CHARACTERI
STI
CS (
a
t
T
am
b
= 25 C
)
.
PA
R
A
M
ETER
S
Y
M
BO
L
M
I
N
.
M
AX
.
U
N
I
T
C
O
N
D
I
TI
O
N
S
.
Br
eakdow
n V
o
l
t
ag
e
s
V
(
BR)
CBO
-80
V
I
C
=-
1
0
0
?
A,
I
E
=0
V
(
BR)
CE
O
-60
V
I
C
=-
1
0
m
A
,
I
B
=0
*
V
(
BR)
E
B
O
-5
V
I
E
=-
1
0
0
?
A,
I
C
=0
C
o
lle
c
to
r C
u
t-
O
ff C
u
r
r
e
n
t
I
CBO
-
100
nA
V
CB
=-
6
0
V
C
o
lle
c
to
r -E
m
i
tt
e
r
C
u
t-O
ff
Cu
r
r
e
nt
I
CES
-
100
nA
V
CES
=-
6
0
V
E
m
it
t
e
r
C
u
t-
O
f
f
C
u
rren
t
I
EB
O
-
100
nA
V
EB
=-
4V
,
I
C
=0
S
a
t
u
rati
o
n
V
o
l
t
a
g
e
s
V
CE(
s
at
)
-0
.3
-0
.6
V V
I
C
=
-
50
0m
A
,
I
B
=-
5
0
m
A
*
I
C
=-
1
A
,
I
B
=-
1
00m
A
*
V
BE(
s
at
)
-1
.2
V
I
C
=-
1
A
,
I
B
=-
1
00m
A
*
B
a
se-
E
m
i
t
t
e
r
Tur
n-
on Vo
l
t
age
V
BE(
o
n)
-1
.0
V
I
C
=-
1
A
,
V
CE
=-
5V
*
S
t
a
t
i
c

F
o
rw
ard C
u
rren
t
Transfer
Ra
t
i
o
h
FE
100 100 80 15
30
0
I
C
=-
1
m
A,
V
CE
=-
5V
*
I
C
=
-
50
0m
A
,
V
CE
=-
5
V
*
I
C
=-
1
A
,
V
CE
=-
5
V
*
I
C
=-
2
A
,
V
CE
=-
5
V
*
Tr
ansi
t
i
on Fr
equency
f
T
150
M
H
z
I
C
=-
5
0
m
A
,
V
CE
=-
1
0
V
f
=
100
M
H
z
O
u
t
put
C
a
p
a
ci
t
a
nce
C
ob
o
10
pF
V
CB
=
-
10
V
,
f
=
1M
Hz
*M
eas
u
r
ed
un
der pu
l
s
ed
c
o
nd
i
t
i
o
n
s
.
P
u
l
s
e w
i
d
t
h=
300
?
s.
D
u
ty
cy
c
l
e
≤
2%
Fo
r
t
y
p
i
c
a
l
Ch
ar
act
e
r
i
st
i
c
s
g
r
aph
s
see FM
M
T
591

dat
a
s
h
eet
FCX591
3 - 92
C
C
B
E

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FCX591PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

Specifications

Related Models

Datasheet

Abstract

FCX591
PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR