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FDS4410
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

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Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional    switching PWM controllers.

The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable  RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply   designs with higher overall efficiency.

Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed 		10 A
50
PD Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)		 2.5 W
1.2
1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Features

10 A, 30 V. RDS(ON) = 0.0135 W  @ VGS = 10 V    
                  RDS(ON) = 0.0200 W  @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters
with PWM controllers.
Very fast switching .
Low gate charge (typical 22 nC).

Pinout

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Datasheet

Size: 241.99KB
Page: 8
PDF: FDS4410.pdf
  • Description:
    Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
  • MFG:
    FAIRCHILD [Fairchild Semiconductor]
 

Abstract


April 1998


F DS441 0
Single N-Channel Logic Level PWM Optimized PowerTrench TM MOSFET

General Description Features
Absolute Maximum Ratings T A = 25 o C unless other wise noted
Symbol Parameter F DS4410 Units
V DSS Drain-Source Voltage 30 V
V GSS Gate-Source Voltage ± 20 V
I D Drain Current - Continuous (Note 1a) 10 A
- Pulsed 50
P D Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
T J ,T STG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R θJA Thermal Resistance, Junction-to-Ambient (Note 1a ) 50 °C/W
R θJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
FDS4410 Rev.B1
10 A, 3 0 V. R DS(ON ) = 0.0135 ? @ V GS = 10 V
R DS(ON ) = 0.0200 ? @ V GS = 4.5 V .
Optimized for use in switching DC/DC converters
with PWM controllers.
Very fast switching .
Low gate charge ( typical 22 nC).
SOT-23 SuperSOT T M -8 SOIC-16SO-8 SOT-223SuperSOT T M -6
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON )
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/ DC power supply
designs with higher overall efficiency .
1
6
7
8
2
4
3
5
S
D
SS
SO-8
D
D
D
G
pin 1
FDS
4410
? 1998 Fairchild Semiconductor Corporation
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