FDS6680A
Single N-Channel, Logic Level, PowerTrench MOSFET

Abstract

November 2004


?2004 Fairchild Semiconductor Corporation FDS6680A Rev F1(W)

FDS6680A
Single N-Channel, Logic Level, PowerTrench
?
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
? 12.5 A, 30 V R
DS(ON)
= 9.5 m? @ V
GS
= 10 V
R
DS(ON)
= 13 m? @ V
GS
= 4.5 V
? Ultra-low gate charge
? High performance trench technology for extremely
low R
DS(ON)

? High power and current handling capability

S
D
S
S
SO-8
D
D
D
G
D
D
D
S
S
S
G
Pin 1
SO-8

4
3
2
1
5
6
7
8

Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage ±20
I
D
Drain Current – Continuous (Note 1a) 12.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
P
D

(Note 1c) 1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6680A FDS6680A 13’’ 12mm 2500 units

FDS6680A