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FDS6961A
Dual N-Channel Logic Level PowerTrenchTM MOSFET

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Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage
±20
V
ID

 Drain Current – Continuous (Note 1a)
3.5
A
                      – Pulsed
14
PD Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a)
1.6
                                     (Note 1b)
1
                                      (Note 1c)
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
–55 to +150
°C

Features

● 3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V
                      RDS(ON) = 0.140 Ω @ VGS = 4.5 V.
● Fast switching speed.
● Low gate charge (2.1nC typical).
● High performance trench technology for extremely low RDS(ON).
● High power and current handling capability.

Pinout

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Datasheet

Size: 241.1KB
Page: 8
PDF: FDS6961A.pdf
  • Description:
    Dual N-Channel Logic Level PowerTrenchTM MOSFET
  • MFG:
    FAIRCHILD [Fairchild Semiconductor]
 

Abstract


April 1999

F DS6961 A
Dual N-C hannel Logic Level PowerTrench TM MOSFET
General Description Features
Absolute Maximum Ratings T A = 25 o C unless other wise noted
Symbol Parameter Ratings Units
V DSS Drain-Source Voltage 30 V
V GSS Gate-Source Voltage ± 20 V
I D Drain Current - Continuous (Note 1a) 3.5 A
- Pulsed 14
P D Power Dissipation for Single Operation (Note 1) 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
T J ,T STG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R θJA Thermal Resistance, Junction-to-Ambient (Note 1a ) 78 °C/W
R θJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
FDS6961 A Rev .C
3.5 A, 3 0 V. R DS(ON ) = 0.090 ? @ V GS = 10 V
R DS(ON ) = 0.140 ? @ V GS = 4.5 V .
Fast switching speed .
Low gate charge (2.1 nC typical).
High performance t rench technology for extremely low
R DS(ON) .
High power and current handling capability.
SOT-23 SuperSOT T M -8 SOIC-16SO-8 SOT-223SuperSOT T M -6
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor 's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance .
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
S1
D1
S2
G1SO-8
D2
D2
D1
G2
FDS
6961A
pin 1
1
5
7
8
2
3
4
6
? 1999 Fairchild Semiconductor Corporation
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