GT40T301
Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1500 V
Gate-emitter voltage VGES ±25 V
Collector current DC IC 40 A
1 ms ICP 80 A
Emitter-collector forward
current
DC IECF 30 A
1 ms IECPF 80 A
Collector power dissipation (Tc =
25°C)
PC 200 W
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 μs (typ.) (IC = 40 A) FRD : trr = 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)

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Datasheet

Size: 311.21KB
Page: 6
PDF: GT40T301.pdf
  • Description:
    Insulated Gate Bipolar Transistor Silicon N Channel IGBT
  • MFG:
    TOSHIBA [Toshiba Semiconductor]
 

Abstract


GT40T301
2002-01-18 1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301

Parallel Resonance Inverter Switching Applications



? FRD included between emitter and collector
? Enhancement-mode
? High speed IGBT : t
f
= 0.25 ?s (typ.) (I
C
= 40 A)
FRD : t
rr
= 0.7 ?s (typ.) (di/dt = ?20 A/?s)
? Low saturation voltage: V
CE (sat)
= 3.7 V (typ.) (I
C
= 40 A)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V
CES
1500 V
Gate-emitter voltage V
GES
±25 V
DC I
C
40
Collector current
1 ms I
CP
80
A
DC I
ECF
30
Emitter-collector forward
current
1 ms I
ECPF
80
A
Collector power dissipation (Tc =
25°C)
P
C
200 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
?55~150 °C

Equivalent Circuit


Unit: mm
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