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IR21084S
HIGH AND LOW SIDE DRIVER

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Description

The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side nced output channels. Proprietary HVIC and latch immuneCMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.  The output drivers feature a high lse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-nnel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Specifications

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition
Min.
Max.
Units
VB High side floating absolute voltage
-0.3
625
V
VS High side floating supply offset voltage
VB - 25
VB + 0.3
VHO High side floating output voltage
VS - 0.3
VB + 0.3
VCC Low side and logic fixed supply voltage
-0.3
25
VLO Low side output voltage
-0.3
VCC + 0.3
DT Programmable dead-time pin voltage (IR21084 only)
V SS- 0.3
VCC+ 0.3
VIN Logic input voltage (HIN & LIN)
VSS - 0.3
VCC + 0.3
VSS Logic ground (IR21084 only)
VCC - 25
VCC + 0.3
dVS /dt
 Allowable offset supply voltage transient
-
50
V/ns
PD Package power dissipation @ TA +25C             (8 lead PDIP)
-
1.0
W
                                                                          (8 lead SOIC)
-
0.625
                                                                          (14 lead PDIP)
-
1.6
                                                                          (14 lead SOIC)
-
1.0
RthJA Thermal resistance, junction to ambient            (8 lead PDIP)
-
125
℃/W
                                                                          (8 lead SOIC)
-
200
                                                                          (14 lead PDIP)
-
75
                                                                          (14 lead SOIC)
-
120
TJ Junction temperature
-
150
℃
TS Storage temperature
-50
150
TL Lead temperature (soldering, 10 seconds)
-
300

Features

·Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·3.3V, 5V and 15V input logic compatible
·Cross-conduction prevention logic
·Matched propagation delay for both channels
·High side output in phase with HIN input
·Low side output out of phase with LIN  input
·Logic and power ground +/- 5V offset.
·Internal 540ns dead-time, and
   programmable up to 5us with one
   resistor (IR21084)
   external RDT
·Lower di/dt gate driver for better
   noise immunity
·Available in Lead-Free

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Datasheet

Size: 187.91KB
Page: 18
PDF: IR2010.pdf
  • Description:
    HIGH AND LOW SIDE DRIVER
  • MFG:
    IRF [International Rectifier]
 

Abstract


Typical Connection
HIGH AND LOW SIDE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
? Gate drive supply range from 5 to 20V
? Undervoltage lockout for both channels
? 3.3V, 5V and 15V input logic compatible
? Matched propagation delay for both channels
? Logic and power ground +/- 5V offset.
? Lower di/dt gate driver for better noise immunity
? Outputs in phase with inputs
? Also available LEAD-FREE (PbF)
Packages
IR2301(S) & (PbF)
8 Lead PDIP
IR2301
8 Lead SOIC
IR2301S
www.irf.com 1
IR2301
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Data Sheet No. PD60201 Rev.D
(Refer to Lead
Assignments for
correct pin con-
figuration). This/
These
diagram(s)
show electrical
connections
only. Please re-
fer to our Appli-
cation Notes
and DesignTips
for proper circuit
board layout.
Description
The IR2301(S) are high voltage, high speed
power MOSFET and IGBT drivers with indepen-
dent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized mono-
lithic construction. The logic input is compatible
with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to
600 volts.
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g99g111g110g100g117g99g116g105g111g110
g112g114g101g118g101g110g116g105g111g110
g108g111g103g105g99
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2106/2301//2108//2109/2302/2304 Feature Comparison
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