IRF540
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| Supplier Information | Part Number | Mfg | Pack | D/C | Description | Inquire |
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit | |
| Drain–to–Source Voltage |
VDSS |
100 |
Vdc | |
|
Drain–to–Gate Voltage (RGS = 1.0 MΩ) |
VDGR |
100 |
Vdc | |
| Gate–to–Source Voltage — Continuous — Non–repetitive (tp 3 10 μs) |
VGS VGSM |
±20 ±40 |
Vdc Vdc | |
| Drain Current — Continuous — Continuous @ 100℃ — Single Pulse (tp 3 10 μs) |
ID ID IDM |
27 19 95 |
Adc Apk | |
| Total Power Dissipation Derate above 25℃ |
PD |
145 1.16 |
Watts W/℃ | |
| Operating and Storage Temperature Range |
TJ, Tstg |
–55 to 150 |
℃ | |
| Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25℃ (VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25℃) |
EAS |
365 |
mJ | |
| Thermal Resistance — Junction–to–Case° — Junction–to–Ambient° |
RθJC RθA |
0.86 62.5 |
℃/W | |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
℃ | |
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Size: 177.54KB |
| Page: 6 | |
| PDF: IRF540.pdf |