IRHNA57160
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 69 A
IDM Pulsed Drain Current 300 A
PD @ TC = 25°C Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 363 mJ
IAR Avalanche Current 75 A
EAR Repetitive Avalanche Energy 25 mJ
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
TJ Operating Junction -55 to 150 oC
TSTG Storage Temperature Range   oC
  Pckg. Mounting Surface Temp. 300 (for 5s) oC
  Weight 3.3(Typical) g
· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight

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Datasheet

Size: 181.24KB
Page: 8
PDF: IRHNA57160.pdf
  • Description:
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
  • MFG:
    IRF [International Rectifier]
 

Abstract


Absolute Maximum Ratings
Parameter Units

I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current 75*
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current 69
I
DM
Pulsed Drain Current G192 300
P
D
@ T
C
= 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy G193 363 mJ
I
AR
Avalanche Current G192 75 A
E
AR
Repetitive Avalanche Energy G192 25 mJ
dv/dt Peak Diode Recovery dv/dt G194 6.0 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 3.3 (Typical) g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
RADIATION HARDENED JANSR2N7469U2
POWER MOSFET 100V, N-CHANNEL
SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/673
06/09/04
www.irf.com 1
G42G32G67G117G114G114G101G110G116G32G105G115G32G108G105G109G105G116G101G100G32G98G121G32G112G97G99G107G97G103G101
SMD-2
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57160 100K Rads (Si) 0.012? 75*A JANSR2N7469U2
IRHNA53160 300K Rads (Si) 0.012? 75*A JANSF2N7469U2
IRHNA54160 600K Rads (Si) 0.012? 75*A JANSG2N7469U2
IRHNA58160 1000K Rads (Si) 0.013? 75*A JANSH2N7469U2
Features:
G110 Single Event Effect (SEE) Hardened
G110 Ultra Low RDS(on)
G110 Low Total Gate Charge
G110 Simple Drive Requirements
G110 Ease of Paralleling
G110 Hermetically Sealed
G110 Surface Mount
G110 Ceramic Package
G110 Light Weight
G70G111G114G32G102G111G111G116G110G111G116G101G115G32G114G101G102G101G114G32G116G111G32G116G104G101G32G108G97G115G116G32G112G97G103G101
G153
G53
G3G3G24
IRHNA57160
TECHNOLOGY
PD - 91860H

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