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MPS8098
NPN General Purpose Amplifier

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Specifications

Rating Symbol Value Unit
Collector−Emitter Voltage
MPS8098, MPS8598
MPS8099, MPS8599		 VCEO 60
80		 Vdc
Collector−Base Voltage
MPS8098, MPS8598
MPS8099, MPS8599		 VCBO 60
80		 Vdc
Emitter −Base Voltage VEBO 4.0 Vdc
Collector Current − Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C		 PD 625
5.0		 W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 1.5
12		 W
mW/°C
Storage Temperature Range Tstg −55 to +150 °C

Features

• Pb−Free Packages are Available

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Datasheet

Size: 23.82KB
Page: 2
PDF: MPS8098.pdf
  • Description:
    NPN General Purpose Amplifier
  • MFG:
    FAIRCHILD [Fairchild Semiconductor]
 

Abstract


MPS8098
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
MPS8098
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
MPS8098
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
C
B
E
TO-92
? 1997 Fairchild Semiconductor Corporation
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