TLP599B

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The TOSHIBA TLP599B consists of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead plastic DIP (DIP6).

The TLP599B is a bi-directional switch which can replace mechanical relays in many applications.

Characteristic
Symbol
Rating
Unit
LED
Forward current
IF
50
mA
Forward current derating
(Ta ≥ 25°C)
ΔIF / °C
-0.5
mA / °C
Peak forward current
(100μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Detector
Junction temperature
Tj
125
°C
Off-state output terminal voltage
VOFF
60
V
On-state current A connection
ION
200
mA
B connection
300
C connection
400
On-state RMS current
derating(Ta ≥ 25°C)
A connection
ΔION / °C
-2
mA / °C
B connection
-3
C connection
-4
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min.,R.H.≤ 60%) (Note 2)
BVS
2500
Vrms


(Note 2): Device considered a twoterminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together.

● Peak off−state voltage: 100V (min.)
On−state current: 200mA (max.) (A connection)
On−state resistance: 4Ω (max.) (A connection)
Insulation thickness: 0.4mm(max.)
Isolation voltage: 2500Vrms (min.)
UL recognized: UL1577, file no. E67349
Trigger LED current (Ta = 25°C)

Classification (Note 1)
Trigger LED Current
(mA)
Marking Of Classification
@ION = 200mA
Min.
Max.
(IFT2)
-
2
T2
Standard
-
5
T2, blank


(Note 1): Application type name for certification test, please use standard product type name, i.e.
               TLP599B (IFT2) : TLP599B

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