TM893GBK32

The TM497FBK32 is a 16M-byte dynamic random-access memory (DRAM) organized as four times 4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight TMS417409DJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TMS417409DJ is described in the TMS416409, TMS417409 data sheet (literature number SMKS884).

The TM497FBK32 SIMM is available in the single-sided BK leadless module for use with sockets. The TM497FBK32 features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation from 0°C to 70°C.

The TM893GBK32/S is a 32M-byte DRAM organized as four times 8388608 × 8 bits in a 72-pin leadless SIMM.The SIMM is composed of sixteen TMS417409DJ 4194304 × 4-bit DRAMs.

The TM893GBK32/S SIMM is available in the double-sided BK leadless module for use with sockets.The TM893GBK32/S features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation from 0°C to 70°C.

Supply voltage range, V^_CC (see Note 1)    . . . . . . . . . . . . . .– 1 V to 7 V
Voltage range on any pin (see Note 1)  . . . . . . . . . . . . . . . . – 1 V to 7 V
Short-circuit output current   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 W
Operating free-air temperature range, T^_A  . . . . . . . . . . . . . .0°C to 70°C
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . –55°C to 125°C

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Description

Specifications

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