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UN2123
Silicon PNP epitaxial planer transistor

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Specifications


Parameter
Rating
SYMBOL
 UNIT
Collector-base voltage
-50
VCBO
V
Collector-emitter voltage
-50
VCEO
V
Collector current
-500
IC
mA
Power dissipation*
200
P
mW
Junction temperature
150
Tj
°C
Range of storage temperature
−55~+150
Tstg
°C

Features

● Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
●Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

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Datasheet

Size: 84.91KB
Page: 6
PDF: UN2123.pdf
  • Description:
    Silicon PNP epitaxial planer transistor
  • MFG:
    PANASONIC [Panasonic Semiconductor]
 

Abstract


1
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
n
Features
l Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
n
Resistance by Part Number
Marking Symbol (R
1
)(R
2
)
l UN2121 7A 2.2kW 2.2kW
l UN2122 7B 4.7kW 4.7kW
l UN2123 7C 10kW 10kW
l UN2124 7D 2.2kW 10kW
l UN212X 7I 0.27kW 5kW
l UN212Y 7Y 3.1kW 4.6kW
n
Absolute Maximum Ratings (Ta=25?C)
1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini Type Package
Unit: mm
Internal ConnectionParameter Symbol Ratings Unit
Collector to base voltage V
CBO
–50 V
Collector to emitter voltage V
CEO
–50 V
Collector current I
C
–500 mA
Total power dissipation P
T
200 mW
Junction temperature T
j
150 ?C
Storage temperature T
stg
–55 to +150 ?C
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
B
C
R1
R2
E
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